| Parameter | DFB EPI wafer | High-power DFB EPI wafer | Silicon Photo EPI Wafer |
|---|---|---|---|
| Rate | 10G/25G/50G | — | — |
| Wavelength | 1310nm | 1310nm | 1310nm |
| Size | 2inch/3inch | 2inch/3inch | 2inch/3inch |
| Feature | CWDM 4/PAM 4 | BH process, BH process containing Al | PQ DFB, including Al DFB |
| Description | EPIHOUSE data center epitaxial wafers are mainly based on InP and GaAs substrate. The epitaxial wafers of basing on InP substrates are mainly edge-emitting DFB/EML lasers and silicon optical epitaxial wafers, with the rate exceeding 25Gb/s and wavelengths of 1270nm, 1310nm, 1330nm, etc., satisfying the transmission requirements of 100G/400G/800G optical modules. | ||
InP-based EPI wafers
GaAs-based EPI wafers
| Parameter | VCSEL EPI wafer | GaAs PD EPI wafer |
|---|---|---|
| Rate | 25G/50G | 10G/25G/50G |
| Wavelength | 850nm | — |
| Size | 4inch/6inch | 3inch/4inch/6inch |
| Description | EPIHOUSE data center epitaxial wafers are mainly based on InP and GaAs substrate. The epitaxial wafers are grown on GaAs substrates are mainly vertical cavity surface emitting lasers (VCSEL) and GaAs-based PD, with the wavelength of 850nm and a modulation rate higher than 50Gb/s, meeting the needs of short-distance data transmission in data centers. | |
